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Miloslav Ciz 2024-08-31 14:44:45 +02:00
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@ -14,7 +14,7 @@ A basic division of transistors is following:
- **N channel**: Source and drain are made of N semiconductor put into a P semiconductor. They have a bit different properties from P channel FETs.
Commonly used graphical symbols for transistor are (usually in a circle):
```
E E D D
| | | |
@ -23,7 +23,7 @@ B___|.-' B___|.-' G |--' G |--'
| | | |
C C S S
BJT (NPN) BJT (PNP) FET (N) FET (P)
BJT (NPN) BJT (PNP) FET (N) FET (P)
```
First FET transistors were JFETs (junction-gate FET) but by today were mostly replaced by **MOSFETs** (metal-oxide-semiconductor FET), a transistor using a metal oxide layer for separating the gate terminal which gives it some nice properties over JFET. These transistors are used to implement [logic gates](logic_gate.md) e.g. using the **[CMOS](cmos.md)** fabrication process which uses complementary pairs of P and N channel FETs so that e.g. one is always off which decreases power consumption.
First FET transistors were JFETs (junction-gate FET) but by today were mostly replaced by **MOSFETs** (metal-oxide-semiconductor FET), a transistor using a metal oxide layer for separating the gate terminal which gives it some nice properties over JFET. These transistors are used to implement [logic gates](logic_gate.md) e.g. using the **[CMOS](cmos.md)** fabrication process which uses complementary pairs of P and N channel FETs so that e.g. one is always off which decreases power consumption.